| 摘要 |
963,222. Semi-conductor devices. LICENTIA PATENT-VERWALTUNGS-G.m.b.H. July 5, 1961 [July 8, 1960], No. 24286/61. Heading H1K. If in the manufacture of a semi-conductor device a PN junction produced by a conventional alloying process is found to have inadequate rectifying properties, the semi-conductor body is etched in the region of the junction and subjected to a second alloying process without the addition of further alloying material. The example described relates to the alloying of gold/antimony pellets to silicon bodies. It is advantageous to wash the semiconductor body with petroleum ether after the etching, and best results are achieved if the second alloying stage is carried out under the same conditions as the first, although cooling down of the melt after the second stage may be carried out more slowly than after the first. The body may be etched after completion of the second alloying process. |
