WIRING STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To accomplish a wiring structure with which the generation of a lateral hillock can be suppressed. SOLUTION: The first wiring 12 of about 5μm in width is provided on a board 10. Also, the second wiring 14 of about 1μm in width is provided as a structure located adjacent to the first wiring 12 on the board 10. A rectangular-shaped continuous rugged part is provided on the side wall part 16 of the first wiring in close vicinity to the second wiring 14.