| 摘要 |
PURPOSE: To enable joining ensuring strength close to that of materials to be joined at low temp. and pressure in a short time by vapordepositing an Si3 N4 - SiC composite material on a ceramic chip, superposing this chip on other ceramic chip and joining them under special conditions. CONSTITUTION: Amorphous powder of <=1μm average particle diameter contg. Si, C and N is press-compacted and fired to obtain an Si3 N4 /SiC composite material having 25-75vol.% SiC content. This composite material is vapor- deposited by CVD on the joining surface of at least one of ceramic chips 1 to be joined. The chips 1 are then superposed on each other, 5-30MPa pressure is applied in the directions of arrows and the chips 1 are joined by heating to 1,550-1,650 deg.C in a nonoxidizing atmosphere.
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