| 摘要 |
<p>PURPOSE: To shorten the distance between the feeding point on a gate electrode and channel region by a method wherein an aluminium film is used as the gate electrode and at least the side surfaces of the gate electrode are covered with an aluminium oxide film. CONSTITUTION: An aluminium oxide film 10 is provided on at least the end surfaces of a gate electrode 8 and source and drain electrodes 7 are respectively connected with source and drain regions 3 in such a way as to roughly coincide with the end surfaces of this film 10. By such a structure, contact holes for a source and a drain are provided to bring a feeding point of the electrode 8 close to a channel, whereby the reduction in the frequency characteristics of an insulated-gate field-effect semiconductor device and the increase in on resistance of the device can be prevented from being generated. Moreover, the source and drain regions of a TFT are self-aligned with each other and moreover, as a contact part of the electrode 8 for feeding to the source and drain regions is also decided in a self-aligning manner, the area of an element, which is needed for the TFT, is decreased and the integration degree of the device can be improved.</p> |
