Verfahren zur Herstellung einer Halbleiterschaltung

摘要

The method comprises the steps of forming a trench in a substrate 51 to separate an active region from an inactive region, filling the trench with an oxidisation blocking material 59, capping the active region to prevent oxidisation thereof and oxidising to form a field oxide film 50 in the inactive region. No oxygen penetrates into the active region during the oxidation whereby a field oxide film can be formed without occurrence of a bird's beak. This enables fabrication of the semiconductor devices required for the production of memories of 1Gb or more. Two distinct methods are disclosed with reference to Figs 5a to 5j and 6a to 6h respectively. In the first, inactive and active regions are first formed using a photomask and the trench is subsequently formed. The oxidisation blocking material is then formed to fill the trench and cover the sidewall of the active region. In the second, inactive and active regions are defined by using a trench mask. The oxidisation blocking material is then formed to fill the trench and cover the inactive and active regions after which it is removed from these regions by polishing. <IMAGE>