| 摘要 |
A lateral bipolar transistor in which a thin diffusion barrier (4) is applied to a base region (10) between an emitter region (9) and a collector region (11) and on which there is a base electrode (8) designed for low-ohmic supply, which is connected to a highly doped base connection region and consists, for example, of polysilicon, into which doping agent is diffused out from said base connection region.
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