| 摘要 |
PURPOSE: To provide an opto-electric integrated device capable of being connected in series and responding to a light beam with the same wavelength as an output beam and an integrated circuit with a plurality of opto-electric integrated devices. CONSTITUTION: An opto-electric integrated device 100 includes a plane luminous semiconductor laser 104 with a vertical-type resonator, a phototransistor 106, and a semiconductor buffer structure 108 between the semiconductor laser 104 and the phototransistor 106. Then, the semiconductor laser 104 has an active region 114 with a distortion quantum well structure that emits a light beam with a wavelength ofλ, while the phototransistor 106 has a base layer that absorbs the light beam with the wavelength ofλ. In addition, the semiconductor buffer structure 108 has a face 128 with a lattice constant substantially in accordance with that of the base layer 124 so that the base layer 124 can be grown on the semiconductor layer 104 in an epitaxial growth step.
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