| 摘要 |
PURPOSE: To provide the manufacture of a semiconductor substrate which does not cause autodoping and can reduce the slip dislocation within a board. CONSTITUTION: A silicon nitride film 11 is made on the rear side of an n<-> silicon substrate 10, and then an n<+> buffer layer 12 and a p<+> layer 13 are epitaxially grown on the surface side, the n<-> silicon substrate 10 is shaved or polished to the specified thickness from the rear side. In case of using one 800μm or over in thickness thicker than usual for the n<-> silicon substrate 10, the silicon nitride film 11 may not be made. Moreover, for the p<+> layer 13, the p<+> layer 13 is made in double structure composed of a p<+> layer and an undoped silicon layer and also in case of placing the undoped silicon layer at the uppermost layer, the silicon nitride film 11 is needless, too.
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