发明名称 FORMING METHOD OF MINUTE WIRING
摘要 PURPOSE:To enable formation of a minute wiring at a low cost by a method wherein a metal layer and an organic resist are formed sequentially on an insulating base, the metal layer is etched with the organic resist used as a mask and the organic resist is peeled off. CONSTITUTION:A metal layer 12 is formed on an insulating base 11 and an organic resist 14 of high viscosity is formed in the same pattern as a desired minute wiring on this metal layer 12. Next, the metal layer 12 is etched with this organic resist 14 used as a mask and then the organic resist is peeled off. As for the minute wiring of high precision of which the wire width is 50mum or below in particular, in this case, the organic resist of which the viscosity at a shear speed 3 (1/S) is 1000 to 6000PS and that at a shear speed 1(1/S) 10000 to 30000 PS is used preferably as the organic resist 14 of high viscosity. According to this constitution, the minute wiring having the wire width of 100mum or below can be formed at a low cost.
申请公布号 JPH06275938(A) 申请公布日期 1994.09.30
申请号 JP19930083970 申请日期 1993.03.17
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HATTORI HISAO
分类号 H05K1/09;H05K3/06;H05K3/44;H05K3/46;(IPC1-7):H05K3/06 主分类号 H05K1/09
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