| 摘要 |
PURPOSE:To provide a greater capacity nonvolatile memory with a sufficient write/read speed. CONSTITUTION:A memory cell comprises a storage electrode 2 formed on an insulating substrate 1, a ferrodielectric thin film 3 formed over the storage electrode, a gate electrode 4 formed on the ferrodielectric thin film, a gate insulating film 5 formed on the gate electrode 4, a semiconductor layer 6 formed on the gate insulating film, a source region 7 and a drain region both formed on a semiconductor layer surface, separated away from each other, and a source electrode 11 and a drain electrode 12 formed on the source region and the drain region respectively. |
