| 摘要 |
PURPOSE:To obtain an electron beam resist compsn. with which a resist pattern excellent in image contrast and cross-sectional shape can be formed and can be developed with an org. alkali soln. without generating scum, and especially suitable to be used as an upper layer in a multilayer process in the production of a semiconductor element. CONSTITUTION:This electron beam resist compsn. contains alkali-soluble ladder silicon polymers expressed by formula, alkoxymethylated melamine resin and tris dibromopropylene isocyanulate. In formula, (n) and (m) satisfy the relation of 0.6<=n/(m+n)<=0.9. |
