| 摘要 |
A process for fabricating a semiconductor device having a non-uniformly and lightly doped channel comprising the steps of forming on a Si substrate an isolation region of a field oxide and an active region of a thin SiO2 layer; performing first channel doping by implanting first conductivity type ions; after removing said thin SiO2 layer, forming a gate oxide dielectric and a gate electrode thereon; performing a second channel doping by implanting said type ions; depositing a thin polysilicon layer; depositing a SiO2 layer on said thin polysilicon layer; etching to remove a portion of said SiO2 layer and thin polysilicon layer to form a side wall; and implanting second conductivity type ions followed by heat treatment to provide source and drain regions.
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