Semiconductor device with field plates.

摘要

The present invention relates to a semiconductor device which is fabricated in simple process steps and which prevents deterioration in a breakdown voltage. Diffusion regions (2) and (3) are formed in space in a surface of an n<-> type layer (1). The diffusion regions (2) and (3) are separated from each other by an insulation layer (6b). Conductive films (5a) and (5e) are disposed in contact with the diffusion regions (2) and (3). A conductive film (5c) is disposed on the insulation layer (6b). The conductive films (5a), (5c) and (5e) are insulated from each other by the insulation layer (6b) and another insulation layer (6a), but coupled to conductive films (4b) and (4d) formed on the insulation layer (6a). A wiring conductive film (4) is also formed on the insulation layer (6a). The wiring conductive film (4) has a relatively small capacitance with the conductive films (5a), (5c) and (5e). Due to the device structure, influence of the wiring conductive film (4) over the surface of the semiconductor device is blocked by the conductive films. Hence, an electric field concentration will not result. <IMAGE>