| 摘要 |
The present invention is directed to a method of making an image sensor having a CCD shift register and at least one photocapacitor wherein features of the shift register and photocapacitor are commonly made and the photocapacitor has a thin plate of conductive polycrystalline silicon. The method includes the steps of embedding into a body of a semiconductor material of one conductivity type dopants of the opposite conductivity type to simultaneously form a channel region of the shift register and a channel region of a photocapacitor. A layer of a dielectric material is formed on the body and over the channel regions. A layer of conductive polycrystalline silicon is formed on the dielectric layer and is defined to form a top plate of the photocapacitor over the photocapacitor channel region and at least some gate electrodes of the shift register over the shift register channel region. The top plate of the photocapacitor is then thinned, such as by etching, to a thickness which allows reduced absorption and interference losses of the incident illumination and, thus, improves the light reaching the photocapacitor channel region beneath the top plate and the portion of the body beneath the photocapacitor channel region.
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