发明名称 METHOD AND SYSTEM FOR MAKING STORAGE BLOCK OF ANY SET OF MEMORY ELEMENT TYPES
摘要 1. Process of recognizing a memory block for any array of memory element types, characterized in that selection of a given memory type with number "i" is made in a single cross-field (PK) connecting array points in pairs "A/i,j/" and "B/i,j/" with the same line number "i" coordinates, corresponding with a given memory type.2. System for recognition of a memory block for any array of memory element types, characterized in that the memory block consists of a group of sockets (GP) for memory elements, decoder (D) generating memory selection signals and single cross-field (PK), whereas the cross-field (PK) contains two arrays of soldering points "A/i,j/" and "B/i,j/", where i=1,.,t, j=1,...,p,...,p+q, and where the number of lines "t" is equal to the number of memory types, while the number of columns "r" =p+q equals to total number of sockets terminals "p" and for memory elements decoder (D) terminals "q" , which require connecting with other signals depending on the memory types, placed on a flat surface with the points of both arrays with the same coordinates placed side by side.<IMAGE>
申请公布号 PL159119(B1) 申请公布日期 1992.11.30
申请号 PL19880274312 申请日期 1988.08.19
申请人 发明人
分类号 G11B;G11C5/06;(IPC1-7):G11C5/06 主分类号 G11B
代理机构 代理人
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