Halbleitervorrichtung mit einem Feldeffekt-Transistor mit isolierter Torelektrode, Verfahren zur Herstellung einer solchen Halbleitervorrichtung und Schaltungsanordnung mit einer solchen Halbleitervorrichtung

摘要

1,228,472. IGFETS. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 Feb., 1968 [28 Feb., 1967], No. 52475/70. Divided out of 1,228,471. Heading H1K. The subject-matter of this Specification is included in Specification 1,228,471 from which it is divided. The claims relate to an IGFET in which the source and drain regions extend to one face of a layer or body of opposite conductivity type where one of them is contacted by a metal electrode layer, the other of said regions having a lateral extension buried within said layer or body in an area which does not underlie the other region.