| 摘要 |
<p>An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer and metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact layer exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W and Ag give digital instead of analogue switching.</p> |
