| 摘要 |
<p>PURPOSE:To heighten the controllability of the erasing operation of the title device and the rewriting reliability of the device using a FAST type storage element by impressing voltage lower than prescribed erasing voltage to the source area of the storage element before impressing the prescribed erasing voltage to the source area. CONSTITUTION:Under the grounded state of a source line SL, writing drain voltage and writing gate voltage are respectively impressed to a selected data line DL and a selected word line WL, and writing is executed for a storage element Qm at the intersection of the DL and the WL. In the same manner, reading out drain voltage and reading out gate voltage are respectively impressed, and information in the storage element Qm is read out. Further, an X decoder 12 is made into an all non-selected state, the erasing voltage is impressed from a driving circuit 16 to the line SL under the grounded state of the line WL, and erasing is executed. In this case, after a preliminary erasing operation is executed by impressing the erasing voltage lower than the prescribed erasing voltage for a fixed period, prescribed actual erasing is executed.</p> |
