| 摘要 |
PURPOSE:To make it possible to bring a bit line into contact with a semiconductor column in a self alignment contact manner by forming a conductive pattern on a semiconductor column which is exposed by removing an insulating film after elevating dielectric strength above a conductive side wall. CONSTITUTION:An Si3N4 film 42 is coated to a silicon substrate 41, and the silicon substrate 41 is etched into column shape and the surroundings are oxidized to form an oxide film 44, and then a conductive sidewall 45 is formed around the semiconductor column 43, and PSG47 is accumulated on the whole face by oxidizing the surface of the sidewall 45 so as to bury the semiconductor column 43. Next, the PSG film 47 is etched back to expose the Si3N4 film 42, and this is oxidized and the topside of the polysilicon sidewall 45 is oxidized up to the depth enough for giving voltage resistance, and after removal of the Si3N4 film 42, an aluminum wiring pattern 49 is formed on the semiconductor column 43 and the PSG film 47. Hereby, a contact can be formed on the semiconductor column of the substrate in self alignment. |
