发明名称 Reactive ion etching apparatus.
摘要 <p>In order to correct plasma divergence in an electron cyclotron resonance etching apparatus, a magnetic throttle is provided. In one embodiment, the magnetic throttling is induced by a magnetic coil (40) disposed in a manner to surround a chamber (42) in which the etching is performed or disposed adjacent the specimen (44).</p>
申请公布号 EP0343017(A2) 申请公布日期 1989.11.23
申请号 EP19890305165 申请日期 1989.05.22
申请人 NEC CORPORATION 发明人 SAMUKAWA, SEIJI
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项
地址