| 摘要 |
A semiconductor device, having an optically-sensitive barrier region which is substantially fully depleted at zero bias and in the absence of light, is switchable between a high voltage blocking state and a high current state by means of incident light. The barrier region contains a net impurity concentration of opposite conductivity type to that of first and second regions between which it is located and is divided laterally into plural areas located between deeper closely-spaced field-relief regions. In the absence of incident light and with reverse bias of the barrier region the device has a high voltage blocking characteristic due to depletion layers from neighboring field-relief regions merging together to reduce the electrostatic field below the barrier region. |
