发明名称 Electrostatic discharge integrated circuit protection
摘要 A circuit and structure intended for use in CMOS IC designs acts to protect signal lines against ESD. An array of three transistors is connected so that the voltage pulse that appears on the signal line as a result of ESD, forces at least one transistor into conduction. The circuit responds equally to positive and negative pulses and is, therefore, symmetrical, and independent of bias or supply potentials. In the absence of an ESD pulse the circuit draws a very low leakage current and, therefore, has very little effect upon normal IC operation.
申请公布号 US4829350(A) 申请公布日期 1989.05.09
申请号 US19880190619 申请日期 1988.05.05
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 MILLER, BERNARD D.
分类号 H01L29/78;H01L21/8234;H01L27/02;H01L27/088 主分类号 H01L29/78
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