| 摘要 |
PURPOSE:To equalize the resistance value of an impurity region by forming an impurity gas under a sufficiently saturated state into an impurity generator and supplying the surface of a semiconductor substrate with the impurity gas. CONSTITUTION:An impurity gas 13 under a sufficiently saturated state is formed into an impurity generator. 12, and the surface of a semiconductor substrate is supplied with the impurity gas 13. A solid impurity 11 is admitted into the impurity generator 12, specified space is formed onto the impurity generator 12, the upper section of the impurity generator 12 is covered with an upper cover 14, and the impurity gas 13 under the sufficiently saturated state is generated in the space. Accordingly, the feed of the impurity gas is stabilized, thus equalizing the resistance value of an impurity region, then realizing an excellent semiconductor production unit.
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