| 摘要 |
PURPOSE:To obtain a semiconductor laser stable against variations in a temperature and an optical output by forming an optical guide layer and a clad layer of both sides between which an active layer of a distributed feedback semiconductor laser is disposed of a semiconductor having a light absorption coefficient of the reciprocal of the length of a laser resonator. CONSTITUTION:An optical guide layer 4 and a clad layer 2 of both sides between which an active layer 3 of a distributed feedback semiconductor laser is disposed are formed of a semiconductor having an absorption coefficient of the reciprocal of the length of a resonator. Then, the value of the same degree as a spectral beam width obtained by heretofore integrating with a semiconductor optical guide is stably obtained even if a temperature and an optical output are varied. Accordingly, a spectral beam width is narrowed without raising a threshold value. Thus, a semiconductor laser stable against the variations in the temperature and the optical output can be obtained. |
