| 摘要 |
PURPOSE:To keep the potential of semiconductor substrates at the time of a probe test constant by forming metallic wirings for separate semiconductor device so that adjacent metallic wirings are each shaped continuously while the metallic wirings and the semiconductor substrates are connected electrically at every semiconductor device. CONSTITUTION:Insulating films 4 at every semiconductor device are formed onto a semiconductor substrate 2 using a substance such as silicon as a material, and metallic wirings 3 are shaped onto the insulating films 4. The metallic wirings 3 are formed so as to be continuously shaped with the metallic wirings 3 for adjacent semiconductor devices 1 by groove-shaped boundary sections 7 among parted adjacent semiconductors 1, 1 in the insulating films 4, and the metallic wirings 3 are connected electrically to the exposed semiconductor substrate 2 in the boundary sections 7. Contact holes 6 are bored to one parts of the insulating films 4 in each semiconductor device 1, the metallic wirings 3 are also connected electrically to the semiconductor substrate 2 through the contact holes 6, and the semiconductor substrates 1 can be given fixed potential when the whole is cut off into separate semiconductor device.
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