| 摘要 |
PURPOSE:To improve the bonding performance by a method wherein the second gate is constructed by a polysilicon film which is doped with phosphorus and by a molybdenum silicide film and, on this molybdenum silicide film, an Al film or an aluminum silicon film is provided. CONSTITUTION:On a field oxide film 2 which is formed on a silicon substrate 1, a doped polysilicon film 3 is formed as the first gate and a silicon dioxide film 4 is formed so as to cover the polysilicon film 3. On this assembly, a polysilicon film 5 which is doped with phosphorus and a molybdenum silicide film 6 are provided in succession as the second gate. In addition, on this assembly a PSG film or a BPSG film 7 is provided. After only a a part corresponding to this part for a bonding pad has been removed by etching and an opening 7a has been made, an aluminum silicon film 8 is formed on this opening. Then, after a prescribed pattern has been formed, an insulating protective film 9 is formed on the assembly. Through this constitution, it is possible to prevent a decline in the bonding performance at the initial stage.
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