| 摘要 |
PURPOSE:To form an upper electrode having a uniform thickness along a wide range by a simple manufacturing process, by constituting a light transmitting electrode on the upper part of a photoelectric conversion layer comprising amorphous silicon with a silicide layer of transition metal. CONSTITUTION:On a glass substrate 1, a chromium layer as a lower electrode 2 is selectively evaporated and formed through a metal mask. Then, an amorphous silicon hydride P layer 3a, an amorphous silicon hydride I layer 3b and an amorphous silicon hydride N layer 3c are sequentially laminated. A chromium layer 6 is further evaporated and formed selectively through a metal mask. Thereafter, the layer 6 is removed by wet etching. A chromium silicide layer as an upper electrode 4, which is yielded by interface reaction between the layer 6 and the layer 3, is made to remain. Then, an aluminum layer is selectively deposited, and a contact electrode 5 is formed. Thereafter, the layer 3 is selectively removed. |
