发明名称 MEMORY ELEMENT
摘要 PURPOSE:To always make the stabilized states of storage elements immediately after the application of the power source the same by selecting the resistance values of the collector load resistors of a pair of transistors different from each other. CONSTITUTION:When the load resistor 11 has a resistance value of (n) OMEGA, load resistor 13 is (m) OMEGA (m>n) and the characteristics of transistors 10 and 12 and both capacities of the collector-base connecting wires are equal with each other, the base potential of the transistor 12 comes in a high potential earlier than that of the transistor 10 after the application of the power source. Accordingly, the operation is tabilized in such state that the base potential of the transistor 12 is in a high potential and that of the transistor 10 is in a low potential. Therefore, a read line 15 comes in a low potential, and a read line 16 in a high potential, by inputting these lines 15 and 16 to an amplifier 18, the output 19 of the amplifier 18 can be made always in logic '0'.
申请公布号 JPS62291794(A) 申请公布日期 1987.12.18
申请号 JP19860135545 申请日期 1986.06.11
申请人 NEC CORP 发明人 TAKANASHI SHUICHI
分类号 G06F12/08;G11C11/40;G11C11/411 主分类号 G06F12/08
代理机构 代理人
主权项
地址