| 摘要 |
PURPOSE:To contrive improvement in dimensional accuracy when a multilayer resist method is performed by a method wherein the difference in refractive indexes between a first layer and a second layer, and the second layer and a third layer is designated properly. CONSTITUTION:An Al film 2 which is the film to be processed is formed on a stepped Si substrate 1, and then a first organic substance layer 3 is formed. A high temperature heat treatment is performed, an inorganic intermediated layer 4 is formed, and a pattern 4' is formed by transferring a photoresist pattern 5 to the intermediate layer 4 using a dry etching. Subsequently, a pattern is transferred to the first organic substance layer 3 using the pattern 4' as a mask, and a pattern 3' is formed. The difference in refractive index of the intermediary layer against the refractive index of the first organic substance layer and the photoresist layer is to be designated approximately at 5% or below. |
