| 摘要 |
PURPOSE:To prevent a short-circuit between a semiconductor device and a wiring layer by forming an insulating film on the surface of a scribing line region. CONSTITUTION:As a flip chip semiconductor device can be actuated in a low voltage of about 1V, a short-circuit between the device and the wiring layer can be prevented if an oxide film 11 is remained by 200-1,000Angstrom or thereabouts. A solder film 5 is formed in such a way as to cover a Cr-Cu-Au film 4 and thereafter, when the wafer is heated, the solder film is formed into a solder ball 6' on the Cr-Cu-Au film 4 by its surface tension. At this time, an excess solder ball 8' is easy to leave on a scribing line region 7. When this flip chip semiconductor device is mounted on the printed substrate, the solder ball 8' on the scribing line region 7 comes to contact to the solder ball 6' on the Cr-Cu- Au film 4 and the solder ball 8' and the printed substrate come to such a state that they are electrically connected to each other, but the solder ball 8' is electrically insulated from an Si substrate 1 because the oxide film 11 is ready-formed on the surface of the scribing line region 7. Therefore, the printed substrate and the Si substrate are not short-circuited.
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