| 摘要 |
PURPOSE:To increase mutual conductance to a very large extent, by providing the functions of a potential barrier against electrons and a gate electrode in one semiconductor layer, and providing the function of a potential barrier against holes in the other semiconductor layer. CONSTITUTION:In the case of an n-channel FET, the function of a potential barrier against electrons and the function of a substantial gate electrode are simultaneously provided in a semiconductor 102. In a semiconductor layer 101, the function as a potential barrier against holes is provided. Thus, a leak current from a gate electrode 105 to a source electrode 108 is suppressed sufficiently. Under this state, a distance between the gate electrode 105 and an electron layer becomes substantially zero. Therefore, mutual conductance can be made very large.
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