| 摘要 |
<p>PURPOSE:To obtain a liquid crystal display element having TFT having superior switching characteristic as address element by using a ZnO film as picture element electrode for display. CONSTITUTION:Thin metallic film comprising Ta, Mo, etc., is formed on an insulative substrate 11 comprising glass substrate, etc., and a gate electrode 2 is formed by photo-etching to prepare a pattern. Then, gate insulating film (SiNx film) 13 is formed, which is formed to semiconductor film (a-Si film) by laminating successively. The semiconductor film is converted to a pattern forming semiconductor film (a-Si film) 14. Conductor film (n<+>a-Si film) is then formed, which is also converted to a pattern to form semiconductor film (n<+>a-Si film) 151, 152. Thereafter, thin metallic film comprising Mo, Ti, Al, -Si, etc., is formed, converted to pattern to form a source electrode 16. Further, transparent electroconductive film comprising ZnO is formed and patterned to form a drain electrode and a picture element electrode 17 for display. Finally, passivation film (SiNx film) 18 is formed.</p> |
