| 发明名称 |
Shallow groove capacitor fabrication method |
| 摘要 |
A shallow capacitor cell is formed by using conventional integrated circuit processes to build a substrate mask having sublithographic dimensions. Multiple grooves, or trenches, are etched into the substrate using this mask. The capacitor dielectric layer and plate are then formed in the grooves.
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| 申请公布号 |
US4650544(A) |
申请公布日期 |
1987.03.17 |
| 申请号 |
US19850725047 |
申请日期 |
1985.04.19 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ERB, DARRELL M.;SELCUK, ASIM A. |
| 分类号 |
H01L21/308;H01L21/334;H01L29/94;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C23F1/02 |
主分类号 |
H01L21/308 |
| 代理机构 |
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代理人 |
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