发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To operate the titled equipment continuously while removing any reacted produce adhering to th periphery of quartz glass tube by a method wherein a plasma discharger producing plasma is arranged on the space near the periphery above a rotatable quartz glass tube. CONSTITUTION:A cylindrical quartz glass tube 13 provided with multiple linear lamps utilized as a light source is arranged in a reaction chamber 1 so that a substrate 5 may be irradiated with augmented intensity illumination by means of approaching the light source 12 to the substrate 5 up to an arbitrary distance. Besides, in case of forming a thin film, any reacted product adhering to the surface of quartz glass tube 13 is shifted upward by the rotating tube 13 to be etched by plasma produced by a plasma discharger 14 so that the titled equipment with linear lamps lighted may be operated continuously.
申请公布号 JPS61131425(A) 申请公布日期 1986.06.19
申请号 JP19840253452 申请日期 1984.11.29
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI TOSHIYUKI;OTOMO YOSHIMI;KINOSHITA NORIYOSHI;ODA MASAO
分类号 H01L21/205;H01L21/263;H01L21/31 主分类号 H01L21/205
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