| 摘要 |
PURPOSE:To make it possible to form an element isolating region, in which the difference between the size of a mask in an element region and the size of the finished part is small, and to form a transistor corresponding to miniaturization, by implanting ions of impurities having the same type as a substrate through an insulating film so that the peak of the concentration distribution is present in the vicinity of the surface of a semiconductor in the element isolating region. CONSTITUTION:A thick insulating film 102 is formed on a semiconductor substrate 101. Then, an etching window 103 for exposing the semiconductor substrate, which is to become an element region, is formed. About 1/2 of the thickness of the insulating film undergoes isotropic etching. The remaining part undergoes anisotropic etching. Thus the thick insulating film in the element region is removed. Thereafter, ions, having the same type as the substrate are implanted at high energy so that the peak of the concentration distribution is present in the vicinity of the surface of the semiconductor having the thick insulating film. Then the impurity distribution is obtained so that the peak of the concentration is located in the deep place in the semiconductor substrate in the element region, which does not have the thick insulating film, and the substrate concentration is kept in the vicinity of the surface where a channel is formed. An element isolating region, in which the difference between the mask in the element region and the final size (b) is small, is formed. Therefore, the manufacturing method suitable for large integration degree can be obtained. |
