发明名称 Semiconductor vibration detection device with lever structure
摘要 A semiconductor vibration detection device according to the present invention includes a movable lever which is supported by the semiconductor base with at least one of its ends and includes a vibrating part that extends, with an incorporated electrode, approximately parallel to the semiconductor base, and a fixed electrode layer which is provided on the semiconductor base opposite to the movable lever. The movable lever has a triple layer structure in which the middle section is a polysilicon layer that is formed to be alkali-etching-proof and a top and a bottom layers that are sandwiching the middle layer are also of alkali-etching-proof.
申请公布号 US4571661(A) 申请公布日期 1986.02.18
申请号 US19840646166 申请日期 1984.08.31
申请人 NISSAN MOTOR CO., LTD. 发明人 HOSHINO, SHIGEO
分类号 H01L27/04;G01H1/00;G01H11/00;G01H11/06;G01P15/08;G01P15/125;H01L21/306;H01L21/822;H01L29/84;H04R19/00;(IPC1-7):H01G7/00 主分类号 H01L27/04
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