| 摘要 |
PURPOSE:To prevent the generation of a hillock and electromigration by a method wherein a metal film of Al or an Al-Si alloy is formed on the substrate, and after that, the surface of the metal film is made to oxide and the metal film is turned into an insulating film. CONSTITUTION:A metal film 2 is formed on an Si substrate 1 by a sputtering method and when a lamp annealing is performed by irradiating infrared rays 7 on the metal film 2 for a short time in an atmosphere of O2 gas, the surface of the metal film 2 is brought to high temperatures and is oxidized with O2 and a thin oxide film 8 is formed. Accordingly, a resist pattern 3 is formed, the metal film 2 is performed an atching using an RIE, and after that, when an interlayer insulating film 5 is formed by a CVD method, it can be prevented for a hillock to generate on the surface of the metal film 2. Moreover, the electromigration- resisting property of the metal film 2 is upgraded by this oxide film 8 and the lifetime of this semiconductor device is improved. |
