| 摘要 |
PURPOSE:To enable the inhibition of hot carrier injection to a gate insulation film by a method wherein an aperture that selectively exposes the surface of a semiconductor substrate is formed by etching the insulation film exposed in the aperture, and then an impurity region of low concentration is formed in the semiconductor substrate by impurity adhesion. CONSTITUTION:A field insulation film 2 is formed on the p type Si semiconductor substrate 1. A gate insulation film 3 is formed, and an Mo silicide film 4 is formed. A resist film 5 is patterned into the shape of a gate electrode. The Mo silicide film 4 is etched by applying reactive ion etching with the mixed gas of a chlorine series gas with oxygen gas as the etchant. The film 4 in the part other than a gate electrode 6 covered with the resist film 5 is all removed. Successively, the gate insulation film 3 other than this film 3 covered with the resist film 5 and the gate electrode 6 is all removed, thus selectively exposing the surface of the substrate 1. An n<+> type source region 8 and an n<+> type drain region 9 are formed by As ion implantation. |
