| 摘要 |
PURPOSE:To omit post-treatment without damaging a p-n junction by previously forming a first insulating film, one part thereof functions as a gate insulating film, on the whole surface of a semiconductor substrate and avoiding the damage of the substrate when a second insulating film is left to the side surface of a gate electrode through reactive ion etching. CONSTITUTION:An SiO2 film 12 as a first insulating film is applied on the surface of a p type Si substrate 11, and a polycrystalline Si gate electrode 13 is formed at tue central section of the surface of the film 12. n Type impurity ions are implanted while using the electrode 13 as a mask to form n<+> type regions 141 and 151 on both sides of the electrode 13, and an SiO2 film 16 as a second insulating film is deposited on the whole surface. The film 16 is left only on the side surface of the electrode 13 as a film 16' through reactive ion etching, and n type impurity ions are implanted again while using these electrode 13 and film 16' as a mask to shape deep implanted regions 142 and 152 connected to the regions 141 and 151. Accordingly, a source region 17 consisting of the regions 141 and 142 and a drain region 18 composed of 151 and 152 are obtained. |
