发明名称 PATTERN FORMATION
摘要 PURPOSE:To enable to form a still more minute pattern using a device of comparatively low cost and enabled to perform exposure of a large pattern by a method wherein comparatively large pattern drawn respectively on mask plates of two sheets are utilized, and the patterns thereof are overlapped. CONSTITUTION:A photosensitive resin pattern 6 is formed using a first mask plate, and light 5 is irradiated again through a second mask plate 8. The overlapped pattern part of the second mask plate 8 with the first mask plate forms the desired minute pattern. After exposure is performed, when the patterns are processed with a development process using a solution, etc., the photosensitive resin film at the exposed part is removed to form a minute pattern 9. After then, an exposed wiring metal film 2 is removed using the etching method. Moreover, when the photosensitive resin film 9 is removed, a minute wiring pattern 10 is formed.
申请公布号 JPS6015928(A) 申请公布日期 1985.01.26
申请号 JP19830124302 申请日期 1983.07.06
申请人 MITSUBISHI DENKI KK 发明人 ITAKURA HIDEAKI;YONEDA MASAHIRO
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/30 主分类号 G03F7/20
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