发明名称 FIELD EMISSION ION SOURCE OF ELECTRONIC IMPACT TYPE
摘要 PURPOSE:To enable an ion beam with a large output to be drawn by using a blade-like chip, and utilizing electronic impact carried out with a filament, which is placed almost parallel to the blade, as a method of heating said chip and an ion source material. CONSTITUTION:An ion source consists of a blade-like chip 2', an ion source reservoir 7 from which the bladed end of the chip 2' partially protrudes, a filament 1 which is used as an electron source and placed in linear form along and parallel to the blade, and an electron-accelerating power source 6; a space is allowed between the chip 2' and the reservoir 7. After an ion source material 3 is packed in the ion source reservoir 7, the filament 1 is heated. Next, the ion source material 3 is heated and molten by electrons discharged from the filament 1. As a result, the ion source material 3 in molten form is supplied to the pointed end of the chip 2'. After that, high voltage is applied to both a lead-out electrode and the pointed end of the chip 2' so as to draw an ion beam 5 by field emission. The thus discharged ion beam 5 is introduced into a mass separator system such as a sector magnetic field, where the ion beam 5 is separated into arbitrary ionic kinds by mass separation. A specific kind of ion obtained by mass separation is irradiated on a base plate on which the ion is intended to be implanted, and is implanted at an arbitrary concentration.
申请公布号 JPS5933738(A) 申请公布日期 1984.02.23
申请号 JP19820143216 申请日期 1982.08.20
申请人 HITACHI SEISAKUSHO KK 发明人 TAMURA HIFUMI;ISHITANI TOORU
分类号 H01J37/08;H01J3/04;H01J27/22;H01J27/26 主分类号 H01J37/08
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