| 摘要 |
PURPOSE:To enable the evaluation of the satisfaction of the requirement of a design at an initial stage of a manufacturing process, and to improve yield on manufacture by extending an element region for connecing a probe from an element region with a material of the same quality in a transistor element for monitoring. CONSTITUTION:Diffusion regions 21, 22 constituting source-drain are formed in a transistor region 20 for monitoring a semiconductor substrate to which a functional device is formed. The diffusion regions 21, 22 have the element regions 23, 24 for connecting the probe extending in the direction mutually separating an impurity region made of the material of the same quality as the regions 21, 22. A gate electrode 25 is formed between the diffusion regions 21, 22 through a gate oxide film. The gate electrode 25 has the element region 26 for connecting the probe formed by extending a polysilicon layer, which consists of a material of the same quality as the electrode 25 and contains a predetermined imurity. An impurity region 28 for determining substrate potential is formed near a transistor 27 for monitoring being constituted in this manner. |
