| 摘要 |
PURPOSE:To reduce the OFF current and thus improve the characteristic by a method wherein a plurality of thin film transistors are connected in series, then the electrodes at the both ends are assigned as source electrodes and drain electrodes, and gate electrodes are all connected in common. CONSTITUTION:The thin film transistors having source electrodes, drain electrodes, and gate electrodes formed on an insulation substrate by means of semiconductor thin films are connected in series in N pieces, and one of the electrodes at the both ends is decided as the source electrode, then the other as the drain electrode. The gates of the N thin film transistors are formed into a gate by being all connected in common. The number of N is selected according to the applications of the thin film transistors and the levels of demanded OFF current. |
