| 摘要 |
PURPOSE:To obtain the metallic mask for a fine pattern, while preventing the exfoliation of a medium metallic film mask pattern, by a method wherein, when converting a pattern image-drawn on a resist into a metallic film pattern, with the resist pattern as a mask, a metallic film previously formed on the upper surface of a thick organic film is processed by a dry etching. CONSTITUTION:On an Si wafer 1, an SiN film 2 is produced by a CVD method, then a film 3 of Ti and Au serving as a plating base is adhered thereon, further a polyimide film 4 is applied and baked at a high temperature, and thereafter a carbon film 47 and an Al film 36 are laminated thereon resulting in adhesion. Next, a fixed pattern resist film 5 is provided on the film 36, then, with it as a mask, the film 36 is processed by a reactive sputter etching used with CCl4 into a medium mask 37, and, with it as a mask, an etching is performed, accordingly a pattern 7 constituted of a polyimide film 4 is obtained. thereafter, an X- ray mask constituted of the film 3 is formed by using the pattern 7 as usual. |
