| 摘要 |
PURPOSE:To ideally perform differentiation operation of the potential variation of a transfer electrode of a charge transfer device by calculating the difference at every sampled data and obtaining directly a differential signal at the detector of a signal charge. CONSTITUTION:Transfer electrodes 3a, 3b, 4a, 4b,... and signal charge detecting transfer electrode 8 are formed through an insulating film 2 on a P type silicon semiconductor substrate 1. The drain region of an MOS transistor 9 and the gate electrode of an MOS transistor 10 are connected to the electrode 8. The transistor 10 forms a source follower circuit 12, and the output is sampled by a sample-holding circuit 13. After the electrode 8 is charged at a predetermined potential and the signal charge is transferred to the adjacent transfer electrode, the potential variation of the electrode 8 when the signal charge is transferred to the electrode 8 is externally produced as a differentiating signal. |
