| 摘要 |
PURPOSE:To enable enlargement of a band width by arranging a filter layer having a color of prescribed wavelength directly or indirectly on the photoreceiving surface of a photodiode. CONSTITUTION:As an electro-phototransducer, a luminous diode having an extremely narrow width of spectrum wherein the central wavelength of radiation spectrum 31 is 840nm is employed. And, on the PIN photodiode employed as the photodetector, the filter layer 35 with a color of prescribed wavelength formed of a P type silicon layer 34 formed in the prescribed position on one main surface of an I type silicon substrate 32, of a filter layer 35 with a color of prescribed wavelength formed on the common main photoreceiving surface of the above P type silicon layer 34 and the I type silicon substrate 32, and of an N type silicon layer 36 connected to and formed on the other main surface is formed with a multilayered film. The filter layer thus formed is made to have a characteristic curve 37 of extremely-high sensitivity within the range of 600-1,000nm, especially in the vicinity of 840nm, and photoreception is performed by the PIN photodiode having the above filter layer. |
