| 摘要 |
PURPOSE:To obtain a Darlington connector having high reliability by intersecting an equipotential ring on the upper surface of a boundary between the first and the second transistors through an insulating film with the protective ring in a substrate thereby overcoming the difficulty of wiring it. CONSTITUTION:A P<+> type protective ring 4 for completely surrounding N<+> type bases 2a, 2b, P<+> type emitter 3 and P-N junctions 11a, 11b is formed on a common-collector P type Si substrate 1. An opening is perforated at an oxide film 7 to form an equipotential ring 6 for surrounding completely the electrode 9 and junctions 11a, 11b, an oxide film 8 is coated thereon, an opening is then selectively perforated thereat to form aluminum wire 9. A wiring layer 9a for connecting the emitter E of the first transistor to the base 2b of the second transistor is intercrossed through the oxide film 8 to the equipotential ring 6 on the upper surface of the boundary of both the transistor. In this configuration the respective transistors may be completely surrounded by the rings 4, 6 at the position equi-distantly from the collector and base junctions 11a, 11b to stabilize the withstnad voltage thereof and to obtain a composite semiconductor device which can be connected in Darlington connection with high reliability. |
