| 摘要 |
<p>PURPOSE:To prevent the occurrence of cracks on the glass film by providing notches on the galss film when forming a plurality of elements in the semiconductor wafer, providing mesa grooves at the boundaries between these elements, filling up these grooves with glass passivation films and then separating the wafer into individual elements mechanically at these mesa grooves. CONSTITUTION:From both surface and rear sides of an N-type Si wafer, P-type impurities are diffused thereinto to form P-type regions and a plurality of N-type regions are provided in one of these P-type regions at surface side. Next, mesa grooves 21-23 abutting on the N-type regions, passing through the P-type region and extending into the N-type wafer itself by etching are formed, so that the P-type region at surface side is divided into 11-13. Thereafter, mesa grooves 31-33 are provided on its rear side at the positions confronting the mesa grooves 21-23 so as to form a thyristor element of NPNP-structure in each element region. These mesa grooves at both surface and rear sides are coated with glass passivation films 41-43 and 51-53, respectively. And when separating thus processed substrate into individual elements by use of rubber rollers, notches 61-63 and 71-73 are previously formed on the glass passivation films at the bottom portions of the mesa grooves, respectively.</p> |
