| 发明名称 |
METHOD FOR MANUFACTURING THIN FULM RESISTANCE |
| 摘要 |
<p>PURPOSE:To obtain an ormic contact between TaN2 and electrode film, by destroying an insulator residing inevitably between them by applying a voltage of high-power impedance.</p> |
| 申请公布号 |
JPS5379294(A) |
申请公布日期 |
1978.07.13 |
| 申请号 |
JP19760154190 |
申请日期 |
1976.12.23 |
| 申请人 |
FUJITSU LTD |
发明人 |
KOBAYASHI MASAHIRO;NAKAYAMA TOSHIHIRO;YOSHIDA SHINJI |
| 分类号 |
H01C17/06;H01C17/00;H01L27/01;H05K1/11;H05K3/00 |
主分类号 |
H01C17/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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