| 摘要 |
PURPOSE:To connect a semiconductor substrate 1 and a first conductive layer 3 at the shortest distance, to increase the speed of a device and to improve the degree of integration thereof by removing one parts of the first conductive layer and an insulating layer, forming a stepped section and applying a second conductive layer onto the semiconductor substrate and the first conductive layer while covering the stepped section. CONSTITUTION:An insulating layer 2 and a first conductive layer 3 are applied onto a semiconductor substrate 1 in succession, one parts of the first conductive layer 3 and the insulating layer 2 are removed to shape a stepped section 5, and a second conductive layer 6 is applied onto the semiconductor substrate 1 and the first conductive layer 3 while covering the stepped section 5. That is, the gate 3 and the substrate 1 are connected by the wiring layer 6 applied while covering the stepped section 5. The wiring layer 6 is wired at the shortest distance, thus improving the degree of integration. |
